NSN 5961-01-033-8018

Part Details | TRANSISTOR

5961-01-033-8018 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: J11218, J112-18, E112, 151105600, 151-1056-00, 5961-01-033-8018, 01-033-8018, 5961010338018, 010338018

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 09, 197701-033-801820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-033-8018
Part Number Cage Code Manufacturer
J112-1817856SILICONIX INCORPORATEDDIV SILICONIX
E11217856SILICONIX INCORPORATEDDIV SILICONIX
151-1056-0080009TEKTRONIX, INC.DBA TEKTRONIX
Technical Data | NSN 5961-01-033-8018
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-35.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAK50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG350.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MAXIMUM
OVERALL DIAMETER0.222 INCHES MAXIMUM