NSN 5961-01-034-7445

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-034-7445 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 4VBE40842, 4VBE408/42, VBE40842, VBE408/42, E8140, E814-0, 5961-01-034-7445, 01-034-7445, 5961010347445, 010347445

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 30, 197701-034-744562108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-034-7445
Part Number Cage Code Manufacturer
4VBE408/42H0673ALCATEL-LUCENT NETWORK SYSTEMS
VBE408/42H0673ALCATEL-LUCENT NETWORK SYSTEMS
E814-021845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-034-7445
Characteristic Specifications
SPECIAL FEATURESSILICON FULL WAVE BRIDGE RECTIFIER;15 AMP;BRIDGE DESIGNED TO OPERATE AT HIGH CURRENT LEVELS;1.500 IN. LG BY 1.500 IN. W;2 MTG HOLES 0.140 IN. INSIDE DIA SPACED 1.312 IN. NOMINAL CENTER TO CENTER;M65 DEG C TO P175 DEG C OPERATING TEMP;PEAK REVERSE VOLTAGES UP TO 600 VOLTS REQUIRED