Part Details | TRANSISTOR
5961-01-035-0317 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RT1016G, RT-1016G, RT1016G, RT-1016G, 3521059010, 352-1059-010, 3521059010, 352-1059-010, PT9793, 5961-01-035-0317, 01-035-0317, 5961010350317, 010350317
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 03, 1977 | 01-035-0317 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-035-0317
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RT-1016G | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| RT-1016G | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 352-1059-010 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 352-1059-010 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
| PT9793 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-035-0317
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC250.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF5.0 WATTS MAXIMUM |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | EMITTER |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |