NSN 5961-01-035-8192

Part Details | TRANSISTOR

5961-01-035-8192 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3521065020, 352-1065-020, 3521065020, 352-1065-020, MRP091345, MRP0913-45, 5961-01-035-8192, 01-035-8192, 5961010358192, 010358192

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 16, 197701-035-819220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-035-8192
Part Number Cage Code Manufacturer
352-1065-02013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-1065-02095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
MRP0913-4501281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-01-035-8192
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER
OVERALL LENGTH0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL HEIGHT0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESMICROWAVE PULSE POWER; JUNCTION PATTERN ARRANGEMENT: NPN