NSN 5961-01-036-5402

Part Details | TRANSISTOR

5961-01-036-5402 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: KNA1901 ITEM 28, KBW165E, 2N657, 2N657, 5961-01-036-5402, 01-036-5402, 5961010365402, 010365402

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 28, 197701-036-540220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-036-5402
Part Number Cage Code Manufacturer
KNA1901 ITEM 2802750EATON AEROSPACE LLCDIV FLUID & ELECTRICAL DISTRIBUTION
KBW165E02750EATON AEROSPACE LLCDIV FLUID & ELECTRICAL DISTRIBUTION
2N65749956RAYTHEON COMPANYDBA RAYTHEON
2N6573B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-036-5402
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC200.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF80.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE