Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-037-4712 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 231048706, 231048-706, CR12204, CR122-04, JANTX1N5806, 790693010, 7906930-10, B72159, 1N5806JTX, UTR511, MILPRF19500477, MIL-PRF-19500/477, JAN1N5806, JANTX1N6075, JANTX1N5806US, JANTX1N5806, 10133162, 9444678060, 944467-8060, 8081362, 808136-2, 332312291, 3323-1229-1, 332312291, 3323-1229-1, 2000779004, 20-00779-004, 3539019410, 353-9019-410, 163964, 5961-01-037-4712, 01-037-4712, 5961010374712, 010374712
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 18, 1977 | 01-037-4712 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-037-4712
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 231048-706 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| CR122-04 | 08748 | ELDEC CORPORATIONDBA CRANE AEROSPACE & ELECTRONICS |
| JANTX1N5806 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 7906930-10 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| B72159 | K0967 | MBDA UK LIMITEDDBA MBDA UK LTD |
| 1N5806JTX | 12969 | MICRO USPD INC |
| UTR511 | 12969 | MICRO USPD INC |
| MIL-PRF-19500/477 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N5806 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N6075 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N5806US | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N5806 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 10133162 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 944467-8060 | 06481 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVIGATION AND MARITIME SYSTEMS |
| 808136-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 3323-1229-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 3323-1229-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 20-00779-004 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
| 353-9019-410 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 163964 | 10110 | SCIENTIFIC ATLANTA INC |
Technical Data | NSN 5961-01-037-4712
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | 0$DGS0000$DME0000 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |