Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-038-2057 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: DJ1142, NDP420, NDP-420, 2000760001, 20-00760-001, 5961-01-038-2057, 01-038-2057, 5961010382057, 010382057
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 31, 1977 | 01-038-2057 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-038-2057
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DJ1142 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| NDP-420 | 12969 | MICRO USPD INC |
| 20-00760-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-038-2057
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.2 MAXIMUM FORWARD VOLTAGE, AVERAGE |
| CURRENT RATING PER CHARACTERISTIC | AFM4.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AGM500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 00724-20-00760 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |