Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-039-0333 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: TIC126F, 5961-01-039-0333, 01-039-0333, 5961010390333, 010390333
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 16, 1977 | 01-039-0333 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-039-0333
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| TIC126F | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-039-0333
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CURRENT RATING PER CHARACTERISTIC | DN12.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AH1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 110.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.500 INCHES MINIMUM AND 0.540 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM |
| SPECIAL FEATURES | MTG TAB INCLUDED; JUNCTION PATTERN ARRANGEMENT: PNPN |