Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-039-7386 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: VS609, R3606871, R360687-1, 2462000001, 246200-0001, WPN2462000001, WPN246200-0001, 5961-01-039-7386, 01-039-7386, 5961010397386, 010397386
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 25, 1977 | 01-039-7386 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-039-7386
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VS609 | 12498 | CRYSTALONICS, INC. |
| R360687-1 | 04071 | RAYTHEON COMPANYDBA RAYTHEON |
| 246200-0001 | 65597 | THALES DEFENSE & SECURITY, INC. |
| WPN246200-0001 | 65597 | THALES DEFENSE & SECURITY, INC. |
Technical Data | NSN 5961-01-039-7386
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CH8.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.325 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.225 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 04071-R360687 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |