Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-040-6426 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: UES805, 3001752, 3001-752, ST3F, 5961-01-040-6426, 01-040-6426, 5961010406426, 010406426
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 11, 1977 | 01-040-6426 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-040-6426
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| UES805 | 12969 | MICRO USPD INC |
| 3001-752 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| ST3F | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-01-040-6426
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | DM50.00 AMPERES MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TURRET |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.687 INCHES MINIMUM AND 0.693 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 05869-3001-752 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |