Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-041-6818 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 4791242012, 479-1242-012, 8500064138, 8500064-138, 5961PL1442802, 1N5614, 1N5614, 1N5614, MILPRF19500427, MIL-PRF-19500/427, JANTXV1N5614, 10133164, 5875652, 587565-2, 1N5614, 87490202001, 874-90202-001, 1N5614, 4202000000123, 42020-0000-0123, 2849102100420, 28491-0210-0420, 5961-01-041-6818, 01-041-6818, 5961010416818, 010416818
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 28, 1977 | 01-041-6818 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-041-6818
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 479-1242-012 | 94756 | BOEING COMPANY, THEDBA BOEING |
| 8500064-138 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 5961PL1442802 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 1N5614 | 12969 | MICRO USPD INC |
| 1N5614 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N5614 | 14552 | MICROSEMI CORPORATION |
| MIL-PRF-19500/427 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXV1N5614 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 10133164 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 587565-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N5614 | 13409 | RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR |
| 874-90202-001 | 96182 | SAFRAN ELECTRONICS & DEFENSE,AVIONICS USA, LLC |
| 1N5614 | 14099 | SEMTECH CORPORATION |
| 42020-0000-0123 | U4338 | THALES UK LIMITED DBA THALES UKLTDDEFENCE MISSION SYSTEMS |
| 28491-0210-0420 | U4338 | THALES UK LIMITED DBA THALES UKLTDDEFENCE MISSION SYSTEMS |
Technical Data | NSN 5961-01-041-6818
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | CF30.00 AMPERES MAXIMUM AND CG1.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500 TO 427 GOVERNMENT SPECIFICATION |