Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-042-8173 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N967B, SZG311H, 1N967B, DZ780626D, 1N967B, 2877245, SZG311H, 5961-01-042-8173, 01-042-8173, 5961010428173, 010428173
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 14, 1977 | 01-042-8173 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-042-8173
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N967B | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| SZG311H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N967B | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| DZ780626D | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N967B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 2877245 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| SZG311H | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
Technical Data | NSN 5961-01-042-8173
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 18.9 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | EB7.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF400.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | SELECTED ITEM |