Part Details | TRANSISTOR
5961-01-046-4264 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6424, RELEASE 6499, 2N6424, 2N6424, QB30, QB30, 2N6424, 5961-01-046-4264, 01-046-4264, 5961010464264, 010464264
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 18, 1977 | 01-046-4264 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-046-4264
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6424 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 6499 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6424 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N6424 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| QB30 | 37338 | NAUTEL LIMITED |
| QB30 | 57655 | NAUTEL MAINE INC. |
| 2N6424 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
Technical Data | NSN 5961-01-046-4264
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC250.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB20.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |