Part Details | TRANSISTOR
5961-01-049-0896 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5175, RELEASE6037, 2N5175, 2N5175, 5961-01-049-0896, 01-049-0896, 5961010490896, 010490896
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 10, 1977 | 01-049-0896 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-049-0896
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5175 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6037 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5175 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 2N5175 | 30043 | SOLID STATE DEVICES, INC. |
Technical Data | NSN 5961-01-049-0896
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 130.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC25.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB200.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.225 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6037 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |