Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-050-1019 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 18840047, 1884-0047, C45UX123, 18840047, 1884-0047, 5961-01-050-1019, 01-050-1019, 5961010501019, 010501019
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 31, 1977 | 01-050-1019 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-050-1019
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1884-0047 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| C45UX123 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1884-0047 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
Technical Data | NSN 5961-01-050-1019
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 25.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM ON-STATE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | DS55.00 AMPERES MAXIMUM AND FG700.00 AMPERES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |