Part Details | TRANSISTOR
5961-01-051-8616 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 712 ITT 04110 SAAF, SJ1945, DTS424, 5961PL1247862, JANTX2N6308, 2N6307, PTC424, DTS424, 2N6308, MILS19500498, MIL-S-19500/498, MILPRF19500498, MIL-PRF-19500/498, JANTX2N6308, 30136361, 3013636-1, STI424, STI-424, DTS424, FBNL143, 5961-01-051-8616, 01-051-8616, 5961010518616, 010518616
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 05, 1977 | 01-051-8616 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-051-8616
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 712 ITT 04110 SAAF | N0002 | ALCATEL-LUCENT NORWAY AS |
| SJ1945 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| DTS424 | 16758 | GENERAL MOTORS CORPDELCO ELECTRONICS DIV |
| 5961PL1247862 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| JANTX2N6308 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 2N6307 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| PTC424 | 54648 | MICROSEMI CORP POWER TECHNOLOGYCOMPONENTS |
| DTS424 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N6308 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/498 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/498 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX2N6308 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 3013636-1 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| STI-424 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| DTS424 | 31338 | SEMITRONICS CORP |
| FBNL143 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
Technical Data | NSN 5961-01-051-8616
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB4.00 AMPERES MAXIMUM AND AC8.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF125.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.312 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |