Part Details | TRANSISTOR
5961-01-054-3985 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 12020691, 1202069-1, 3N212, 3N212, 3521045030, 352-1045-030, 3N212, 5961-01-054-3985, 01-054-3985, 5961010543985, 010543985
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 19, 1978 | 01-054-3985 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-054-3985
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1202069-1 | 06424 | ALLIANT TECHSYSTEMS OPERATIONS LLCDIV DEFENSE ELECTRONIC SYSTEMS |
| 3N212 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 3N212 | 34371 | INTERSIL CORPORATIONDIV NA |
| 352-1045-030 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
| 3N212 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-054-3985
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF360.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 06424-1202069 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |