Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-054-9993 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 50826405, 5082-6405, A2X9953, A2X995-3, A2X9953, A2X995-3, 50826405, 5082-6405, 582R093H03, 5961-01-054-9993, 01-054-9993, 5961010549993, 010549993
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 30, 1978 | 01-054-9993 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-054-9993
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5082-6405 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| A2X995-3 | 21847 | FEI MICROWAVE INC |
| A2X995-3 | 14844 | FREQUENCY ELECTRONICS, INC. |
| 5082-6405 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 582R093H03 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
Technical Data | NSN 5961-01-054-9993
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| POWER RATING PER CHARACTERISTIC | AF125.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.120 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.072 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |