Part Details | TRANSISTOR
5961-01-055-1922 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6207, RELEASE6294, D1028, D10-28, 2N6207, D1028, D10-28, 5961-01-055-1922, 01-055-1922, 5961010551922, 010551922
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 02, 1978 | 01-055-1922 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-055-1922
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6207 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6294 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| D10-28 | 0NY61 | RF PRODUCTS INC |
| 2N6207 | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
| D10-28 | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-055-1922
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF20.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 1.000 INCHES NOMINAL |
| OVERALL HEIGHT | 0.690 INCHES NOMINAL |
| OVERALL WIDTH | 1.000 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6294 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |