Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-057-8369 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40RCS100, 5961-01-057-8369, 01-057-8369, 5961010578369, 010578369
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 20, 1978 | 01-057-8369 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-057-8369
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 40RCS100 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
Technical Data | NSN 5961-01-057-8369
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | DS63.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 105.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-65 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 0.565 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.667 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.677 INCHES MINIMUM AND 0.683 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |