Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-058-7803 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: M5X11631, M5X1163-1, TX3080, 7721121, 772112-1, 50823080TXV, 5082-3080TXV, TX3080, 7721121, 772112-1, 44397 28151, 5961-01-058-7803, 01-058-7803, 5961010587803, 010587803
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 01, 1978 | 01-058-7803 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-058-7803
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| M5X1163-1 | 59365 | AEROFLEX / METELICS, INC. |
| TX3080 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 772112-1 | A0267 | ELETTRONICA ASTER SPA |
| 5082-3080TXV | 54893 | HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV |
| TX3080 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 772112-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 44397 28151 | D8385 | THALES DEUTSCHLAND GMBHDBA VERTEIDIGUNGSSYSTEME SEL GMBH |
Technical Data | NSN 5961-01-058-7803
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH10.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AD200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |