Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-060-6663 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 635A716H01, 589R131H01, 5034101, 503410-1, 5961-01-060-6663, 01-060-6663, 5961010606663, 010606663
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 26, 1978 | 01-060-6663 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-060-6663
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 635A716H01 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| 589R131H01 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| 503410-1 | 26269 | U. S. DYNAMICS CORPORATION |
Technical Data | NSN 5961-01-060-6663
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1300.0 NOMINAL ON-STATE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | DH100.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 CASE |
| OVERALL LENGTH | 0.520 INCHES NOMINAL |
| SPECIAL FEATURES | NSN RESTRICTED TO USE BY NWS DEPOT TEAM ONLY |
| END ITEM IDENTIFICATION | AIRPORT SURVEILLANCE RADAR (ASR-9); NEXT GENERATION RADAR (NEXRAD) |