5961010613412, 5961-01-061-3412, JANTX2N5109, 615589-1, JANXTX2N5109, 5961-01-061-3412 - TRANSISTOR

Part Details | TRANSISTOR

5961-01-061-3412 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: JANTX2N5109, 6155891, 615589-1, JANXTX2N5109, 5961-01-061-3412, 01-061-3412, 5961010613412, 010613412

Supply Group (FSG)	NSN Assigned	NIIN	Item Name Code (INC)
59	JUN 17, 1978	01-061-3412	20588 ( TRANSISTOR )

REFERENCE DRAWINGS & PICTURES

Cross Reference | NSN 5961-01-061-3412

Part Number	Cage Code	Manufacturer
JANTX2N5109	81349	MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
615589-1	37695	RAYTHEON COMPANYDBA RAYTHEON
JANXTX2N5109	37695	RAYTHEON COMPANYDBA RAYTHEON

Technical Data | NSN 5961-01-061-3412

Characteristic	Specifications
SEMICONDUCTOR MATERIAL	SILICON
INTERNAL CONFIGURATION	JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTIC	AC0.40 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTIC	AF1.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL	METAL
MOUNTING METHOD	TERMINAL
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD
OVERALL LENGTH	0.260 INCHES MAXIMUM
OVERALL DIAMETER	0.370 INCHES MAXIMUM
SPECIAL FEATURES	JUNCTION PATTERN ARRANGEMENT: NPN
TEST DATA DOCUMENT	37695-615589 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)