Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-061-4520 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SC142D, BRC8PM8L, BRC8PM-8L, BCR8PM8L, BCR8PM-8L, 5961-01-061-4520, 01-061-4520, 5961010614520, 010614520
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 21, 1978 | 01-061-4520 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-061-4520
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SC142D | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| BRC8PM-8L | 66844 | POWEREX, INC |
| BCR8PM-8L | 66844 | POWEREX, INC |
Technical Data | NSN 5961-01-061-4520
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| POWER RATING PER CHARACTERISTIC | AH10.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-220AB |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL HEIGHT | 0.560 INCHES MINIMUM AND 0.650 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |