Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-062-2594 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: L02165, CR12201, CR122-01, 1020GCS0003, 1020G-CS0003, 1N4151, TX1N4153, MILS19500337, MIL-S-19500/337, MILPRF19500337, MIL-PRF-19500/337, JANTX1N4153B, JANTX1N41531, JANTX1N4153-1, JANTX1N4153, JANTXV1N4153, 10133176, 9473041538, 947304-1538, 37270047001, 37270047-001, HDS90037001, HDS9003, 5961-01-062-2594, 01-062-2594, 5961010622594, 010622594
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 13, 1978 | 01-062-2594 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-062-2594
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| L02165 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| CR122-01 | 08748 | ELDEC CORPORATIONDBA CRANE AEROSPACE & ELECTRONICS |
| 1020G-CS0003 | 52166 | INFO-LITE CORP |
| 1N4151 | 52166 | INFO-LITE CORP |
| TX1N4153 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/337 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/337 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4153B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4153-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4153 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXV1N4153 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 10133176 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 947304-1538 | 06481 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVIGATION AND MARITIME SYSTEMS |
| 37270047-001 | 01534 | RAYTHEON COMPANYDBA RAYTHEON |
| HDS90037001 | 55267 | RAYTHEON COMPANYDBA RAYTHEON |
| HDS9003 | 55267 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-062-2594
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CF2.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 337 GOVERNMENT SPECIFICATION |