Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-062-5495 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5653A, RELEASE6049, 1N5653A, 2BK65506815025, 2/BK/65/506815/025, SCA451342, SC/A4/51342, 5961-01-062-5495, 01-062-5495, 5961010625495, 010625495
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1978 | 01-062-5495 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-062-5495
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5653A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6049 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5653A | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 2/BK/65/506815/025 | K0835 | QINETIQ LTD |
| SC/A4/51342 | K0268 | RAYTHEON SYSTEMS LTD |
Technical Data | NSN 5961-01-062-5495
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 71.4 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | CJ1.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL AND GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.570 INCHES MAXIMUM |