Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-064-2504 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 50823188, 5082-3188, 41158009005, 41158-009-00-5, 4791350001, 479-1350-001, 41158009005, 41158-009-00-5, 5800583926201.125, 5800583-926201.125, TXV3188, 50823188, 5082-3188, HP50823188, HP5082-3188, HPA50823188, HPA5082-3188, 4233410, 423-3410, 167074, 6161961, 616196-1, AE0869118, ED00009, ED-00-009, 99114752, 91364193, 5961-01-064-2504, 01-064-2504, 5961010642504, 010642504
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 19, 1978 | 01-064-2504 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-064-2504
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5082-3188 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 41158-009-00-5 | KC1M9 | BAE SYSTEMS MARITIME SERVICESLIMITED |
| 479-1350-001 | 94756 | BOEING COMPANY, THEDBA BOEING |
| 41158-009-00-5 | K4556 | BRITISH AEROSPACE DEFENCE SYSTEMSLTD T/A BAE SYSTEMS |
| 5800583-926201.125 | C0426 | HENSOLDT SENSORS GMBH |
| TXV3188 | 54893 | HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV |
| 5082-3188 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HP5082-3188 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HPA5082-3188 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 423-3410 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 167074 | 21877 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVAL AND MARINE SYSTEMS |
| 616196-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| AE0869118 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| ED-00-009 | U2615 | TECHTEST LTD |
| 99114752 | F6481 | THALES SA |
| 91364193 | F6481 | THALES SA |
Technical Data | NSN 5961-01-064-2504
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM |