Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-065-4820 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: QPND4885, QPND-4885, QPND4885, QPND-4885, 4809253, 480925-3, 4809253, 480925-3, 4802953, 480295-3, 4802953, 480295-3, 5961-01-065-4820, 01-065-4820, 5961010654820, 010654820
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 20, 1978 | 01-065-4820 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-065-4820
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| QPND-4885 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| QPND-4885 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 480925-3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 480925-3 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 480295-3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 480295-3 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-065-4820
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| SPECIAL FEATURES | T.O. 31P5-2GPN22-4 |
| END ITEM IDENTIFICATION | AN/GPN-22 |