NSN 5961-01-065-8071

Part Details | TRANSISTOR

5961-01-065-8071 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3909A, RELEASE5734, 2N3909A, 2N3909, 2N3909A, 522173, 2N3909A, 522173, 2N3909A, 5961-01-065-8071, 01-065-8071, 5961010658071, 010658071

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 23, 197801-065-807120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-065-8071
Part Number Cage Code Manufacturer
2N3909A80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE573480131ELECTRONIC INDUSTRIES ASSOCIATION
2N3909A04713FREESCALE SEMICONDUCTOR, INC.
2N390904713FREESCALE SEMICONDUCTOR, INC.
2N3909A81349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
52217314208MISCO/MINNEAPOLIS SPEAKER COMPANY,INC.
2N3909A5V1P1ON SEMICONDUCTOR CORPORATION
52217314028SYPRIS ELECTRONICS, LLC
2N3909A01295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-01-065-8071
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICBS10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.195 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE