NSN 5961-01-068-8835

Part Details | TRANSISTOR

5961-01-068-8835 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: PP8392, 8017401, 801740-1, 12SE179, 5961-01-068-8835, 01-068-8835, 5961010688835, 010688835

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 06, 197801-068-883520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-068-8835
Part Number Cage Code Manufacturer
PP839233178MICROSEMI PPC INC
801740-196214RAYTHEON COMPANYDBA RAYTHEON
12SE17921845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-068-8835
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC5.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF60.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL HEIGHT0.450 INCHES MAXIMUM
OVERALL WIDTH1.050 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
TEST DATA DOCUMENT96214-801740 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)