Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-069-1140 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N99, HA13242, 1N155, RELEASE1257, RELEASE1215, 1N99, 1N99, 1N99, T22G, 1N99, G1274, 1N99, HD2155, MILS19500201, MIL-S-19500/201, JANTX1N277, 1979819, 8852522, 8800112, HD2155, 9259991B, 925999-1B, 1N99, 1N99, 1N99, 1N99, 5961-01-069-1140, 01-069-1140, 5961010691140, 010691140
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 08, 1978 | 01-069-1140 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-069-1140
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N99 | 27622 | BURNS AND TOWNE INC |
| HA13242 | 49673 | DOWTY RFL INDUSTRIES INC |
| 1N155 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE1257 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE1215 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N99 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N99 | 14936 | GENERAL SEMICONDUCTOR INC |
| 1N99 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| T22G | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1N99 | 14433 | ITT SEMICONDUCTORS DIV |
| G1274 | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| 1N99 | 92703 | KEMTRON ELECTRON PRODUCTS INC |
| HD2155 | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| MIL-S-19500/201 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N277 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1979819 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 8852522 | 19203 | PICATINNY ARSENAL |
| 8800112 | 19203 | PICATINNY ARSENAL |
| HD2155 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 925999-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N99 | 12102 | SEMICONDUCTOR DEVICES INC |
| 1N99 | 31338 | SEMITRONICS CORP |
| 1N99 | 21845 | SOLITRON DEVICES, INC. |
| 1N99 | 34428 | UNITED PAGE INC |
Technical Data | NSN 5961-01-069-1140
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG50.00 MILLIAMPERES MAXIMUM AND AF270.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 75.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.130 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.300 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 201 GOVERNMENT SPECIFICATION |
