NSN 5961-01-075-6266

Part Details | TRANSISTOR

5961-01-075-6266 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: VA1035, MIS30440, MIS-30440, 5961-01-075-6266, 01-075-6266, 5961010756266, 010756266

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 24, 197901-075-626620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-075-6266
Part Number Cage Code Manufacturer
VA103517856SILICONIX INCORPORATEDDIV SILICONIX
MIS-3044018876U S ARMY AVIATION AND MISSILECOMMAND
Technical Data | NSN 5961-01-075-6266
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC90.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE DRAIN
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE