Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-075-9105 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N647, 1N647, 8001242, 800124-2, 1N647, 5961-01-075-9105, 01-075-9105, 5961010759105, 010759105
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 29, 1979 | 01-075-9105 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-075-9105
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N647 | 12969 | MICRO USPD INC |
| 1N647 | 14552 | MICROSEMI CORPORATION |
| 800124-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N647 | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-01-075-9105
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CURRENT RATING PER CHARACTERISTIC | CG400.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF0.6 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 96214-800124 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |