NSN 5961-01-080-2058

Part Details | TRANSISTOR

5961-01-080-2058 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: HXTR6104, HXTR6104, 35866EOPTH70, P27251, P2725-1, 5961-01-080-2058, 01-080-2058, 5961010802058, 010802058

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 21, 197901-080-205820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-080-2058
Part Number Cage Code Manufacturer
HXTR610450434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
HXTR610428480HEWLETT-PACKARD COMPANYDBA HP
35866EOPTH7028480HEWLETT-PACKARD COMPANYDBA HP
P2725-101341MICROPHASE CORPORATION
Technical Data | NSN 5961-01-080-2058
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC20.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD PRESS FIT
TERMINAL TYPE AND QUANTITY4 PIN
OVERALL LENGTH0.050 INCHES NOMINAL
OVERALL DIAMETER0.009 INCHES MINIMUM AND 0.011 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT01341-P2725 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)