Part Details | TRANSISTOR
5961-01-080-9312 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6177, 2N6177, 2N6177, RELEASE6264, 2N6177, 2N6177, 5865193, 586519-3, 5961-01-080-9312, 01-080-9312, 5961010809312, 010809312
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 04, 1979 | 01-080-9312 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-080-9312
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6177 | 063D2 | COUGAR ELECTRONICS II CORPORATION |
| 2N6177 | 62141 | DIODE TRANSISTOR CO INC |
| 2N6177 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6264 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6177 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N6177 | 34371 | INTERSIL CORPORATIONDIV NA |
| 586519-3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-080-9312
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 450.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB20.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 135.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.390 INCHES NOMINAL |