Part Details | TRANSISTOR
5961-01-081-3429 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6658, RELEASE6675, 2N6658, 5961-01-081-3429, 01-081-3429, 5961010813429, 010813429
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 12, 1979 | 01-081-3429 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-081-3429
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6658 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6675 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6658 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-081-3429
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG25.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6675 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |