Part Details | TRANSISTOR
5961-01-084-5827 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 001940001, 0019400-01, RT1116, 2N5482, 5961-01-084-5827, 01-084-5827, 5961010845827, 010845827
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 22, 1979 | 01-084-5827 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-084-5827
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 0019400-01 | 0C9D4 | HARRIS IT SERVICES CORPORATION |
| RT1116 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5482 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-084-5827
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AG16.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNC |
| NOMINAL THREAD SIZE | 0.164 INCHES |
| TERMINAL TYPE AND QUANTITY | 4 PIN |
| OVERALL LENGTH | 0.275 INCHES MINIMUM AND 0.285 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.175 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE GOLD |