NSN 5961-01-087-8335

Part Details | TRANSISTOR

5961-01-087-8335 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: H50351, H050351, H050-351, 7700516001, 77-00516-001, 036511051, 0365-1-1051, 036511051, 0365-1-1051, 5961-01-087-8335, 01-087-8335, 5961010878335, 010878335

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 28, 197901-087-833520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-087-8335
Part Number Cage Code Manufacturer
H5035107263FAIRCHILD SEMICONDUCTOR CORP
H050-35107263FAIRCHILD SEMICONDUCTOR CORP
77-00516-00133875RAYTHEON E-SYSTEMS INC
0365-1-105131338SEMITRONICS CORP
0365-1-105115942USACECOM INTELLIGENCE ELECTRONICWARFARE SENSORS DIRECTORATE
Technical Data | NSN 5961-01-087-8335
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC200.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF350.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT165.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-92
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.525 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.205 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN