NSN 5961-01-094-3749

Part Details | TRANSISTOR

5961-01-094-3749 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: PH6500, 9145921, 914592-1, 914592, MS417, 5961-01-094-3749, 01-094-3749, 5961010943749, 010943749

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 08, 198001-094-374920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-094-3749
Part Number Cage Code Manufacturer
PH650050998M/A-COM TECHNOLOGY SOLUTIONS INC.
914592-149956RAYTHEON COMPANYDBA RAYTHEON
91459249956RAYTHEON COMPANYDBA RAYTHEON
MS41701295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-01-094-3749
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF1.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH0.050 INCHES MAXIMUM
OVERALL HEIGHT0.410 INCHES NOMINAL
OVERALL WIDTH0.330 INCHES NOMINAL
FUNCTION FOR WHICH DESIGNED MICROWAVE
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT49956-914592 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
END ITEM IDENTIFICATIONAN/FPS-115/120