NSN 5961-01-099-8275

Part Details | TRANSISTOR

5961-01-099-8275 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 01019658001, 010-19658-001, 01019658001, 010-19658-001, MJ13090, MJ-13090, 2N667568896, 2N6675/68896, 5961-01-099-8275, 01-099-8275, 5961010998275, 010998275

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 24, 198001-099-827520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-099-8275
Part Number Cage Code Manufacturer
010-19658-00108742ASTEC AMERICA INC.
010-19658-00124429ASTEC AMERICA INCPOWERTEC POWER SUPPLIES DIV
MJ-1309004713FREESCALE SEMICONDUCTOR, INC.
2N6675/6889618722HARRIS CORPSEMICONDUCTOR SECTOR
Technical Data | NSN 5961-01-099-8275
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICBE15.00 AMPERES MAXIMUM AND BF1.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG175.0 WATTS MAXIMUM
TRANSFER RATIO8.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-204AA
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH38.69 MILLIMETERS MAXIMUM
OVERALL HEIGHT11.4 MILLIMETERS MAXIMUM
OVERALL WIDTH26.66 MILLIMETERS MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN