Part Details | TRANSISTOR
5961-01-104-0179 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: VN66AF, 5961-01-104-0179, 01-104-0179, 5961011040179, 011040179
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 25, 1980 | 01-104-0179 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-104-0179
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VN66AF | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-104-0179
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL DRAIN TO GATE VOLTAGE AND 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD2.00 AMPERES NOMINAL AND AK2.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG2.1 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | PLASTIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 TAB W/WIRE LEAD |
| OVERALL LENGTH | 0.280 INCHES MINIMUM AND 0.320 INCHES MAXIMUM |
| OVERALL WIDTH | 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |