Part Details | TRANSISTOR
5961-01-104-2286 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 528132, 528132, 528-132, 3N161, 3N161, 3N161, 5961-01-104-2286, 01-104-2286, 5961011042286, 011042286
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 30, 1980 | 01-104-2286 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-104-2286
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 528132 | 04901 | BOONTON ELECTRONICS CORPORATIONDIV BOONTON ELECTRONICS |
| 528-132 | 04901 | BOONTON ELECTRONICS CORPORATIONDIV BOONTON ELECTRONICS |
| 3N161 | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| 3N161 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 3N161 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-104-2286
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.188 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |