Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-105-6334 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19010652, 1901-0652, 19010652, 1901-0652, VF1012Y, VF10-12Y, VF1012Y, VF10-12Y, 5961-01-105-6334, 01-105-6334, 5961011056334, 011056334
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 31, 1980 | 01-105-6334 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-105-6334
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1901-0652 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1901-0652 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| VF10-12Y | 27777 | L3 TECHNOLOGIES, INC.DBA INSIGHT TECHNOLOGY DIVISION |
| VF10-12Y | 62703 | MICRO QUALITY SEMICONDUCTOR INC SUBOF MICROSEMI CORP |
Technical Data | NSN 5961-01-105-6334
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12000.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF10.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.062 INCHES NOMINAL |
| OVERALL DIAMETER | 0.312 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |