NSN 5961-01-106-4614

Part Details | TRANSISTOR

5961-01-106-4614 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: CD1629, SRF3627, FV33808, SMB963752, SM-B-963752, B4029132, CD1629, 5961-01-106-4614, 01-106-4614, 5961011064614, 011064614

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 18, 198101-106-461420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-106-4614
Part Number Cage Code Manufacturer
CD162958135ACRIAN INC
SRF362704713FREESCALE SEMICONDUCTOR, INC.
FV33808K1090SIMOCO EUROPE LTD
SM-B-96375280063US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS
B402913280063US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS
CD162950155VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV
Technical Data | NSN 5961-01-106-4614
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICAC2.50 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF25.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL CERAMIC
MOUNTING METHOD PRESS FIT
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH0.160 INCHES NOMINAL
OVERALL DIAMETER0.375 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT80063-SM-B-963752 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)