NSN 5961-01-106-5405

Part Details | TRANSISTOR

5961-01-106-5405 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3521108010, 352-1108-010, 3521108010, 352-1108-010, 5961-01-106-5405, 01-106-5405, 5961011065405, 011065405

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 21, 198101-106-540520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-106-5405
Part Number Cage Code Manufacturer
352-1108-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-1108-01095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
Technical Data | NSN 5961-01-106-5405
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT-DOUBLE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB3.00 AMPERES MAXIMUM AND AC20.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG270.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL CERAMIC AND METAL
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY1
TERMINAL TYPE AND QUANTITY3 RIBBON
OVERALL LENGTH1.085 INCHES MAXIMUM
OVERALL HEIGHT0.300 INCHES MAXIMUM
OVERALL WIDTH0.850 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESCONTAINS BERYLLIUM OXIDE; JUNCTION PATTERN ARRANGEMENT: NPN