Part Details | TRANSISTOR
5961-01-107-2018 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: FBNL200, FBN-L200, BUS2B, 5961-01-107-2018, 01-107-2018, 5961011072018, 011072018
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 31, 1981 | 01-107-2018 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-107-2018
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FBN-L200 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
| BUS2B | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
Technical Data | NSN 5961-01-107-2018
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC30.00 AMPERES MAXIMUM AND AB5.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG150.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.326 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.830 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |