Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-110-4397 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5710A, RELEASE6283, 1N5710A, 1N5710A, 1N5710A, 5961-01-110-4397, 01-110-4397, 5961011104397, 011104397
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 31, 1981 | 01-110-4397 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-110-4397
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5710A | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| RELEASE6283 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5710A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5710A | 18518 | MSI ELECTRONICS INC |
| 1N5710A | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-110-4397
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM REVERSE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH10.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6283 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |