Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-111-7747 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N4450, 1N4450, RELEASE4724, 1N4450, 5961-01-111-7747, 01-111-7747, 5961011117747, 011117747
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 23, 1981 | 01-111-7747 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-111-7747
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N4450 | 31637 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 1N4450 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE4724 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N4450 | 13688 | MARTIN MARIETTA CORPELECTRONICS LABORATORY |
Technical Data | NSN 5961-01-111-7747
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF10.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4724 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |