Part Details | TRANSISTOR
5961-01-112-5543 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: T0603040002, T060-304-0002, VN88AFD, VN88AF, 5961-01-112-5543, 01-112-5543, 5961011125543, 011125543
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 06, 1981 | 01-112-5543 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-112-5543
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| T060-304-0002 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
| VN88AFD | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VN88AF | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-112-5543
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 80.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 115.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF12.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-202 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.120 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.280 INCHES MINIMUM AND 0.320 INCHES MAXIMUM |