Part Details | TRANSISTOR
5961-01-112-8757 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: XGSR10025, XGSR10025, 345224019, 345-224-019, 5961-01-112-8757, 01-112-8757, 5961011128757, 011128757
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 12, 1981 | 01-112-8757 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-112-8757
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| XGSR10025 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| XGSR10025 | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 345-224-019 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
Technical Data | NSN 5961-01-112-8757
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC10.00 AMPERES MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |